Measurement of the B̄→D*lν̄ branching fractions and -Vcb-
Publication Type
Journal Article
Publication Date
1-1995
Abstract
We study the exclusive semileptonic B meson decays B−→D*0l−ν¯ and B¯0→D*+l−ν¯ using data collected with the CLEO II detector at the Cornell Electron-positron Storage Ring (CESR). We present measurements of the branching fractions scrB(B¯0→D*+l−ν¯)= (0.5/f00)[4.49±0.32(stat.)±0.39 (syst.)]% and scrB(B−→D*0l−(ν¯)= (0.5/f+−)[5.13±0.54 (stat) ±0.64 (syst)]%, where f00 and f+− are the neutral and charged B meson production fractions at the Υ(4S) resonance, respectively. Assuming isospin invariance and taking the ratio of charged to neutral B meson lifetimes measured at higher energy machines, we determine the ratio f+−/f00=1.04±0.13 (stat) ±0.12 (syst) ±0.10 (lifetime); further assuming f+−+f00=1 we also determine the partial width Γ(B¯→D*lν¯)=[29.9±1.9 (stat) ±2.7 (syst.) ±2.0 (lifetime)] ns−1 (independent of f+−/f00).From this partial width we calculate B¯→D*lν¯ branching fractions that do not depend on f+−/f00 or the individual B lifetimes, but only on the charged to neutral B lifetime ratio. The product of the CKM matrix element ‖Vcb‖ times the normalization of the decay form factor at the point of no recoil of the D* meson, scrF(y=1), is determined from a linear fit to the combined differential decay rate of the exclusive B¯→D*lν¯ decays: ‖Vcb‖scrF(1)=0.0351±0.0019 (stat) ±0.0018 (syst) ±0.0008 (lifetime). The value for ‖Vcb‖ is extracted using theoretical calculations of the form factor normalization.
Discipline
Computer Engineering | Databases and Information Systems
Research Areas
Data Science and Engineering
Publication
Physical Review D, Particles and fields
Volume
51
Issue
3
First Page
1014
Last Page
1033
ISSN
0556-2821
Identifier
10.1103/PhysRevD.51.1014
Publisher
American Physical Society
Citation
1
Comments
complete author list: Barish B.; Chadha M.; Chan S.; Cowen D.; Eigen G.; Miller J.; O'Grady C.; Urheim J.; Weinstein A.; Acosta D.; Athanas M.; Masek G.; Paar H.; Gronberg J.; Kutschke R.; Menary S.; Morrison R.; Nakanishi S.; Nelson H.; Nelson T.; Qiao C.; Richman J.; Ryd A.; Tajima H.; Sperka D.; Witherell M.; Procario M.; Balest R.; Cho K.; Daoudi M.; Ford W.; Johnson D.; Lingel K.; Lohner M.; Rankin P.; Smith J.; Alexander J.; Bebek C.; Berkelman K.; Bloom K.; Browder T.; Cassel D.; Cho H.; Coffman D.; Crowcroft D.; Drell P.; Ehrlich R.; Gaidarev P.; Galik R.; Garcia-Sciveres M.; Geiser B.; Gittelman B.; Gray S.; Hartill D.; Heltsley B.; Jones C.; Jones S.; Kandaswamy J.; Katayama N.; Kim P.; Kreinick D.; Ludwig G.; Masui J.; Mevissen J.; Mistry N.; Ng C.; Nordberg E.; Patterson J.; Peterson D.; Riley D.; Salman S.; Sapper M.; Würthwein F.; Avery P.; Freyberger A.; Rodriguez J.; Yang S.; Yelton J.; Cinabro D.; Henderson S.; Liu T.; Saulnier M.; Wilson R.; Yamamoto H.; Bergfeld T.; Eisenstein B.; Gollin G.; Ong B.; Palmer M.; Selen M.; Thaler J.; Edwards K.; Ogg M.; Bellerive A.; Britton D.; Hyatt E.; MacFarlane D.; Patel P.; Spaan B.; Sadoff A.; Ammar R.; Ball S.; Baringer P.; Bean A.; Besson D.; Coppage D.; Copty N.; Davis R.; Hancock N.; Kelly M.; Kotov S.; Kravchenko I.; Kwak N.; Lam H.; Kubota Y.; Lattery M.; Momayezi M.; Nelson J.; Patton S.; Perticone D.; Poling R.; Savinov V.; Schrenk S.; Wang R.; Alam M.; Kim I.; Nemati B.; Ling Z.; O'Neill J.; Severini H.; Sun C.; Wappler F.; Crawford G.; Daubenmier C.; Fulton R.; Fujino D.; Gan K.; Honscheid K.; Kagan H.; Kass R.; Lee J.; Malchow R.; Skovpen Y.; Sung M.; White C.; Zoeller M.; Butler F.; Fu X.; Kalbfleisch G.; Ross W.; Skubic P.; Wood M.; Fast J.; Mcilwain R.; Miao T.; Miller D.; Modesitt M.; Payne D.; Shibata E.; Shipsey I.; Wang P.; Battle M.; Ernst J.; Gibbons L.; Kwon Y.; Roberts S.; Thorndike E.; Wang C.; Dominick J.; Lambrecht M.; Sanghera S.; Shelkov V.; Skwarnicki T.; Stroynowski R.; Volobouev I.; Wei G.; Zadorozhny P.; Artuso M.; Goldberg M.; He D.; Horwitz N.; Kennett R.; Mountain R.; Moneti G.; Muheim F.; Mukhin Y.; Playfer S.; Rozen Y.; Stone S.; Thulasidas M.; Vasseur G.; Xing X.; Zhu G.; Bartelt J.; Csorna S.; Egyed Z.; Jain V.; Gibaut D.; Kinoshita K.; Kinoshita K.; Barish B.