A new approach to P-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells
Publication Type
Conference Proceeding Article
Publication Date
5-1996
Abstract
The authors report on lattice matched InP/In/sub x/Ga/sub 1-x/As multiple quantum well solar cells (QWSCs). An alternative method of p-doping is used, which allows the dopant to diffuse from a highly doped InGaAs cap into an underlying InP layer which has no deliberate doping. They discuss an important experimental technique, the measurement of the monochromatic photocurrent as a function of bias, used to test this approach to p-doping of InP. A model has been developed and theoretical fits of the spectral response (SR) of several multiple quantum well (MQW) samples are shown. They present results that show the enhancement of the short-circuit current (I/sub SC/) over a comparable InP cell and the enhancement of the open-circuit voltage (V/sub OC/) over an InP/InGaAs double heterostructure. This is the first observation of QWSC efficiency enhancement over comparable conventional solar cells made from the well material alone.
Discipline
Physical Sciences and Mathematics
Research Areas
Information Systems and Management
Publication
Conference Record of the Twenty fifth IEEE Photovoltaic Specialists Conference, 1996: Washington DC, May 13-17, 1996
First Page
113
Last Page
116
ISBN
9780780331679
Identifier
10.1109/PVSC.1996.563960
Publisher
IEEE
City or Country
New York
Citation
Zacnariou, A.; Barnham, K. W. J.; GRIFFIN, Paul Robert; Nelson, J.; Button, C.; Hopkinson, M.; Pate, M.; and Epler, J..
A new approach to P-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells. (1996). Conference Record of the Twenty fifth IEEE Photovoltaic Specialists Conference, 1996: Washington DC, May 13-17, 1996. 113-116.
Available at: https://ink.library.smu.edu.sg/sis_research/3231
Additional URL
http://dx.doi.org/10.1109/PVSC.1996.563960