Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

Author

Paul Robert GRIFFIN, Singapore Management UniversityFollow
J. Barnes
K. W. J. Barnham
G. Haarpaintner
M. Mazzer
C. Zanotti-Fregonara
E. Grunbaum
C. Olson
C. Rohr
J. P. R. David
J. S. Roberts
R. Grey
M. A. Pate

Publication Type

Journal Article

Publication Date

11-1996

Abstract

The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (

Discipline

Physical Sciences and Mathematics

Research Areas

Information Systems and Management

Publication

Journal of Applied Physics

Volume

80

Issue

10

First Page

5815

Last Page

5820

ISSN

0021-8979

Identifier

10.1063/1.363574

Citation

GRIFFIN, Paul Robert; Barnes, J.; Barnham, K. W. J.; Haarpaintner, G.; Mazzer, M.; Zanotti-Fregonara, C.; Grunbaum, E.; Olson, C.; Rohr, C.; David, J. P. R.; Roberts, J. S.; Grey, R.; and Pate, M. A.. Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes. (1996). Journal of Applied Physics. 80, (10), 5815-5820.
Available at: https://ink.library.smu.edu.sg/sis_research/3229

Additional URL

http://dx.doi.org/10.1063/1.363574