Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding
Publication Type
Conference Proceeding Article
Publication Date
9-2007
Abstract
We summarize results on the processing and characterization of current injected 1.55 micrometer single- and multi-microring lasers including vertical active/passive waveguide coupling. The devices were fabricated by GaInAsP/InP-GaAs full-wafer bonding using a BCB interface.
Discipline
Physical Sciences and Mathematics
Research Areas
Quantitative Finance
Publication
2007 33rd European Conference and Exhibition of Optical Communication ECOC: Berlin, September 16-20: Proceedings
First Page
1
Last Page
2
ISBN
9783800730421
Identifier
10.1049/ic:20070227
Publisher
IEEE
City or Country
Piscataway, NJ
Citation
Heidrich, H.; Hamacher, M.; Troppenz, U.; Syvridis, D.; Alexandrapoulos, D.; Mikroulis, S.; and TEE, Chyng Wen.
Vertically Coupled GaInAsP/InP Microring Lasers Fabricated by using Full Wafer Bonding. (2007). 2007 33rd European Conference and Exhibition of Optical Communication ECOC: Berlin, September 16-20: Proceedings. 1-2.
Available at: https://ink.library.smu.edu.sg/lkcsb_research/3359
Additional URL
https://ieeexplore.ieee.org/document/5758449
