Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
Publication Type
Journal Article
Publication Date
11-1996
Abstract
The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (
Discipline
Physical Sciences and Mathematics
Research Areas
Information Systems and Management
Publication
Journal of Applied Physics
Volume
80
Issue
10
First Page
5815
Last Page
5820
ISSN
0021-8979
Identifier
10.1063/1.363574
Citation
GRIFFIN, Paul Robert; Barnes, J.; Barnham, K. W. J.; Haarpaintner, G.; Mazzer, M.; Zanotti-Fregonara, C.; Grunbaum, E.; Olson, C.; Rohr, C.; David, J. P. R.; Roberts, J. S.; Grey, R.; and Pate, M. A..
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes. (1996). Journal of Applied Physics. 80, (10), 5815-5820.
Available at: https://ink.library.smu.edu.sg/sis_research/3229
Additional URL
http://dx.doi.org/10.1063/1.363574
