Title

A new approach to P-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells

Publication Type

Conference Proceeding Article

Publication Date

5-1996

Abstract

The authors report on lattice matched InP/In/sub x/Ga/sub 1-x/As multiple quantum well solar cells (QWSCs). An alternative method of p-doping is used, which allows the dopant to diffuse from a highly doped InGaAs cap into an underlying InP layer which has no deliberate doping. They discuss an important experimental technique, the measurement of the monochromatic photocurrent as a function of bias, used to test this approach to p-doping of InP. A model has been developed and theoretical fits of the spectral response (SR) of several multiple quantum well (MQW) samples are shown. They present results that show the enhancement of the short-circuit current (I/sub SC/) over a comparable InP cell and the enhancement of the open-circuit voltage (V/sub OC/) over an InP/InGaAs double heterostructure. This is the first observation of QWSC efficiency enhancement over comparable conventional solar cells made from the well material alone.

Discipline

Physical Sciences and Mathematics

Research Areas

Information Systems and Management

Publication

Conference Record of the Twenty fifth IEEE Photovoltaic Specialists Conference, 1996: Washington DC, May 13-17, 1996

First Page

113

Last Page

116

ISBN

9780780331679

Identifier

10.1109/PVSC.1996.563960

Publisher

IEEE

City or Country

New York

Additional URL

http://dx.doi.org/10.1109/PVSC.1996.563960

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