Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (
Physical Sciences and Mathematics
Information Systems and Management
Journal of Applied Physics
GRIFFIN, Paul Robert; Barnes, J.; Barnham, K. W. J.; Haarpaintner, G.; Mazzer, M.; Zanotti-Fregonara, C.; Grunbaum, E.; Olson, C.; Rohr, C.; David, J. P. R.; Roberts, J. S.; Grey, R.; and Pate, M. A..
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes. (1996). Journal of Applied Physics. 80, (10), 5815-5820. Research Collection School Of Information Systems.
Available at: http://ink.library.smu.edu.sg/sis_research/3229
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