Title

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

Publication Type

Journal Article

Publication Date

11-1996

Abstract

The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (

Discipline

Physical Sciences and Mathematics

Research Areas

Information Systems and Management

Publication

Journal of Applied Physics

Volume

80

Issue

10

First Page

5815

Last Page

5820

ISSN

0021-8979

Identifier

10.1063/1.363574

Additional URL

http://dx.doi.org/10.1063/1.363574

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